PSMN1R4-40YLD 40 V, 1.4 mΩ, 240 A, Logic Level Gate Drive N-Channel Enhancement Mode MOSFET in a 175 °C LFPAK56 package with advanced TrenchMOS Superjunction technology. This product is designed and compliant for high-performance power-switching applications.

Product features and advantages:

• 240 A capability

• Avalanche rating, 100% tested at IAS = 190 A

• NextPower-S3 technology provides "ultra-fast switchover and soft recovery"

• Low QRR, QG and QGD for high system efficiency and low EMI designs

• Schottky-Plus body diode provides soft switching without the associated high IDSS leakage

• Optimized for 4.5 V gate drive with NextPower-S3 super junction technology

• High-reliability LFPAK (Power SO8) package, copper clips, solder lug connections, and 175 °C certified

• Exposed leads for wave soldering, visual solder joint inspection, and high quality solder joints

• Low parasitic inductance and resistance

Product applications:

• Synchronous rectification

• DC-DC converter

• High-performance, high-efficiency server power supplies

• motor control

• Power OR-ing