IXFP4N85X is an 850V 3.5A X-class HiPERFET power MOSFET with N-channel enhancement mode. It adopts TO-220 package technology and is often used in power supply, DC-DC converter applications, etc.

Product parameters:

Transistor Polarity: N-Channel

Number of channels: 1 channel

Vds - Destruction voltage between drain and source: 850V

Id - Continuous drain current: 3.5A

Rds On - Resistance between drain and source: 2.5Ω

Vgs - Voltage between gate and source: -30V, +30V

Vgs th - threshold voltage between gate and source: 3V

Qg - Gate charge: 7nC

Working temperature: -55℃ to +150℃

Dp - Power Consumption: 150 W

Feature:

• Low RDS(ON) and QG

• Avalanche rated

• Low package inductance

• High power density

• Easy to install

• Save space

Application:

• Switching mode and resonant mode

• power supply

• DC-DC converters

• PFC circuit

• AC and DC motor drives

• Robotics and servo control