LSB65R041GF N-Channel 650V, 78A, 0.041Ω power MOSFET is manufactured using advanced super junction technology. It has very low resistance, making it especially suitable for applications requiring excellent power density and excellent efficiency.

This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is guaranteed; welcome to buy!

Product parameter:

Type Designator: LSB65R041GF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 500 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 78 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 110 nC

Rise Time (tr): 52 nS

Drain-Source Capacitance (Cd): 4800 pF

Maximum Drain-Source On-State Resistance (Rds): 0.041 Ohm

Package: TO-247

Features:

• Ultra low RDS(on)

• Ultra low gate charge (typ. Qg = 110nC)

• 100% UIS tested

• RoHS compliant