SMD BSC0901NS

BSC0901NS OptiMOS™ 30V power MOSFETs for efficient power management

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, tailored to the needs of power management by improved EMI behavior, as well as increased battery life. Available in half-bridge configuration (power stage 5x6). Widely used, can be used for Antminer hash board, onboard charger, computer, mainboard , DC-DC, VRD/VRM, motor control and LED.

Features:

1. Optimized for high performance buck converter

2. Very low on-resistance Rds(on) @ Vgs=4.5V

3. 100% avalanche tested

4. Superior thermal resistance

5. Qualified according to JEDEC for target applications

6. Pb-free lead plating; RoHS compliant

Key Performance Parameters:

V_ds-Drain-Source Breakdown Voltage: 30 V

Operating Temperature: -55 °C   150 °C

R_ds(on)(@4.5V LL) max: 2.4 mΩ

R_{ds (on)}(@4.5V) max: 2.4 mΩ

R_{ds (on)}(@10V) max: 1.9 mΩ

I_d (@25°C) max： 149 A

Q_g (typ @10V): 44 nC

Q_g (typ @4.5V): 22 nC