The IPW60R070C6 600V 53A combines the experience and best-in-class innovation of a leading SJ MOSFET supplier. The device offers all the advantages of a fast-switching SJ MOSFET without sacrificing ease of use. Extremely low switching and conduction losses make switching applications more efficient, compact, lighter, and cooler.

Feature:

• Very low losses due to very low FOM Rdson*Qg and Eoss

• Very high commutation durability

• Ease of use/drive

• Lead-free plating, halogen-free

Product parameter:

Type Designator: IPW60R070C6

Marking Code: 6R070C6

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 391 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 53 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 170 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 215 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO247