N channel 650V super junction MOSFET  The 65R600C is an N-channel power MOSFET designed according to super junction technology. The device features very low on-resistance and ruggedness for switching applications. Its low conduction losses and fast switching can make applications more efficient.

Product parameters:

Type: N-Channel

Drain-source voltage (Vdss): 650V

Continuous drain current (Id): 7A

Power (Pd): 63W

On-resistance (RDS(on)@Vgs,Id): 620mΩ@10V, 3A

Threshold voltage (Vgs(th)@Id): 4V@250μA

Product features:

• Low gate charge

• Low RDS(on) (Low FOM) per die area

• Very low switching and conduction losses

• Very high commutation durability

Product application:

• TV and computer power

• Adopters and Lighting

• Telecom and UPS (Uninterruptible Power Supply)