The IXFA22N65X2 22A 650V is an N-channel enhancement mode Power MOSFET in a TO-263 package with features such as an avalanche-rated, fast intrinsic diode.

Product parameter:

Transistor Pola: Single

Continuous Drain Current (Id): 22 A

Drain-Source Voltage (Vds): 650 V

ON Resistance (Rds(on)): 145 mOhm

Gate-Source Voltage: 30 V

Fall Time: 18 ns

Rise Time: 37 ns

Turn-OFF Delay Time: 42 ns

Turn-ON Delay Time: 30 ns

Operating Temperature Min.: -55 °C

Operating Temperature Max.: 150 °C

Package Type: TO-263

Pins: 3

Mounting Type: SMD

Packaging: Tube

Reflow Temperature Max.: 260 °C

Power Dissipation (Pd): 390 W

Feature:

• Low RDS(ON) and QG

• Avalanche rating

• Low package inductance

• High power density

• easy to install

• save space

Application:

• Switch mode and resonant mode power supplies

• DC-DC converters

• PFC circuit