IRFH5300TRPBF field effect crystal MOS power transistor, original SMD, adopts QFN-8 packaging technology, has lower conduction loss, and achieves better heat dissipation. Environmental protection, safety, safe to use.

Product parameters:

• VDSS: 30V

• RDS(on)max(@VGs = 10V): 1.4mΩ

• Qg (Typical): 50nC

• Rg (Typical): 1.3Ω

• ID(@Tc (bottom) = 25°C): 336A

Feature:

• Low RDSon (<1.4 mΩ)

• Low PCB thermal resistance (<0.5°CW)

• 100% Rg tested

• Thin profile (<0.9mm)

• Industry standard pinouts

• Lower conduction loss

• Enables better heat dissipation

• Improved reliability

• Increased power density

• Multi-vendor compatibility

• Easier to manufacture

• Greener

• Improved reliability

Application:

• OR-ing MOSFET for 12V (typical) bus in-rush current

• Battery Powered DC Motor Inverter MOSFETs