The B2D10065K is a SiC Schottky diode with no reverse recovery current; it outperforms conventional silicon-based devices. The wide band gap (3.26eV), high critical field (3*106 V/cm), and high thermal conductivity (4.9W/cm·K) of SiC makes power semiconductor devices more efficient, faster, and reduce cost, volume, and weight of equipment.

This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is guaranteed; welcome to buy!

Product parameters:

Type of diode: Schottky rectifying

Technology: SiC

Mounting: THT

Max. off-state voltage: 650V

Load current: 10A

Power dissipation: 70W

Semiconductor structure: single diode

Case: TO220-2

Kind of package: tube

Max. forward impulse current: 85A

Max. forward voltage: 1.67V

Leakage current: 15µA

Product features:

Extremely low reverse current

No reverse recovery current

Temperature independent switching

Positive temperature coefficient on VF

Excellent surge current capability

Low capacitive charge

Benefits:

Essentially no switching losses

System efficiency improvement over Si diodes

Increased power density

Enabling higher switching frequency

Reduction of heat sink requirements

System cost savings due to smaller magnetics

Reduced EMI